PART |
Description |
Maker |
1N3163 1N3162 1N3174 1N3176 1N3166 1N3167 |
Diode Switching 150V 240A 2-Pin DO-9 Diode Switching 100V 240A 2-Pin DO-9 Diode Switching 1KV 300A 2-Pin DO-9 Diode Switching 1.4KV 240A 2-Pin DO-9 Diode Switching 300V 240A 2-Pin DO-9 Diode Switching 350V 240A 2-Pin DO-9
|
New Jersey Semiconductor
|
CMPD7006S CMPD7006 CMPD7006A CMPD7006C |
SMD Switching Diode Dual: Common Anode SMD Switching Diode Dual: In Series SMD Switching Diode Single: High Voltage SMD Switching Diode Dual: Common Cathode SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
KDS135 |
Switching Diode SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
BAS116LT1D BAS116LT3G BAS116LT1G |
Switching Diode Switching Diod 0.2 A, 75 V, SILICON, SIGNAL DIODE, TO-236AB
|
ON Semiconductor
|
BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
M1MA142KT1G M1MA141KT1 M1MA142KT1 M1MA141K M1MA142 |
SC-70/SOT-323 PACKAGE SINGLE SILICON SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT Single Switching Diode
|
ONSEMI[ON Semiconductor]
|
1N4148 |
SMALL SIGNAL SWITCHING DIODE Fast Switching Diode
|
Chenyi Electronics Comchip Technology
|
CPD91 |
Switching Diode Low Leakage Switching Diode Chip
|
Central Semiconductor Corp
|
FE3B FE3D FE3C |
Diode Switching 100V 3A 2-Pin Case G-4 Diode Switching 200V 3A 2-Pin Case G-4 Diode Switching 150V 3A 2-Pin Case G-4
|
New Jersey Semiconductor
|
FD700 FD777 |
Diode Switching 30V 0.05A 2-Pin DO-7 Diode Switching 15V 0.05A
|
New Jersey Semiconductor
|
CMHD7006 |
SMD Switching Diode Single: High Voltage SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|